Piezoelectric element, liquid discharging head provided with piezoelectric element, and liquid discharging apparatus

ABSTRACT

The piezoelectric body is configured to have a layered structure such that a plurality of unit layers are stacked in a film thickness direction, and each of the unit layers is formed of a first layer on which the displacement is relatively easy to occur, and a second layer which has a high concentration of Zr as compared with the first layer. In addition, when composition ratio Ti/(Zr+Ti) of Zr to Ti in each of the first layer and the second layer is set as Cr 1  and Cr 2,  the composition ratio of each layer is adjusted so as to satisfy the following conditions (1) to (3). 
         0.41 ≦Cr 1≦0.81    ( 1 )
 
         0.1 ≦Cr 1 −Cr 2≦0.3    ( 2 )
 
       Cr 1 &gt;Cr 2    ( 3 )

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Japanese Patent ApplicationNo. JP 2015-077375 filed on Apr. 6, 2015, which is hereby incorporatedby reference in its entirety.

BACKGROUND

1. Technical Field

The present invention relates to a piezoelectric element which includesa piezoelectric body containing zirconium and titanium, a liquiddischarging head which is provided with piezoelectric element, and aliquid discharging apparatus.

2. Related Art

For example, in an ink jet recording head (a liquid discharging head), apiezoelectric element is preferably used as a driving source fordischarging ink or used as various sensors. The piezoelectric element isformed in such a way of interposing a piezoelectric body between a pairof electrodes. As such a piezoelectric body, lead zirconate titanate(PZT) which is formed of perovskite type crystal containing titanium(Ti), zirconium (Zr), and lead (Pb) is mainly used (for example, referto JP-A-2010-241021). In addition, a portion which is interposed betweena lower electrode layer and an upper electrode layer in thepiezoelectric body layer is an active portion which is deformed due tothe voltage application on both electrode layers.

The properties of the piezoelectric element change depending on acomposition of PZT. For example, in the composition ratio of titanium tozirconium, as the ratio of Ti becomes larger, it is possible to increasethe amount of the displacement at the time of driving. On the otherhand, there is a problem in that as the ratio of Ti becomes larger,leakage current is likely to flow. In contrast, as the ratio of Zrbecomes larger, it is possible to suppress the leakage current; however,there is a problem in that as the ratio of Zr becomes larger, the amountof displacement at the time of driving is decreased.

SUMMARY

An advantage of some aspects of the invention is to provide apiezoelectric element configured such that it is possible to prevent notonly the amount of displacement from being decreased, but also leakagecurrent from occurring at the time of driving, a liquid discharging headprovided with the piezoelectric element, and a liquid dischargingapparatus.

Aspect 1

According to an aspect of the invention, there is provided apiezoelectric element, in which a first electrode, a piezoelectric body,and a second electrode are sequentially stacked, in which thepiezoelectric body is a composite oxide containing titanium (Ti) andzirconium (Zr), and is configured such that when an electric field isprovided between the first electrode and the second electrode,displacement on displacement layers is relatively easy to occur, and aplurality of high-concentrated Zr layers which have a high concentrationof Zr as compared with the displacement layers are stacked on each otherin a film thickness direction, in which when composition ratioTi/(Zr+Ti) of zirconium to titanium in each of the displacement layerand high-concentrated Zr layer is set as Cr1 and Cr2, the compositionratio Cr1 is within a range of 0.41 to 0.81, and a difference betweenthe composition ratio Cr1 and the composition ratio Cr2 is within arange of 0.1 to 0.3, Cr1>Cr2 is established.

According to a configuration of Aspect 1, the piezoelectric body isconfigured such that displacement on displacement layers is relativelyeasy to occur, and high-concentrated Zr layers which have a highconcentration of Zr as compared with the displacement layers are stackedon each other in a film thickness direction, that is, the plurality ofhigh-concentrated Zr layers which have a relatively high concentrationof Zr are formed in the piezoelectric body in the film thicknessdirection, and thus it is possible to prevent not only the amount ofdisplacement of the piezoelectric element from being decreased, but alsoleakage current thereof from occurring, at the time of driving. Inaddition, the plurality of displacement layers and high-concentrated Zrlayers are formed in such a way of being stacked, and thus, even in acase where one of the high-concentrated Zr layers is damaged, it ispossible to suppress the leakage current in other high-concentrated Zrlayers. Therefore, the reliability of the piezoelectric element isimproved.

Aspect 2

In the above-described configuration, it is preferable that thecomposition ratio Cr1 is within a range of 0.51 to 0.71.

According to the configuration of Aspect 2, it is possible to furtherreduce the occurrence of the leakage current in the displacement layer,and to reliably prevent the amount of the displacement from becomingdecreased at the time of driving. For this reason, with the effect ofpreventing the leakage current in the high-concentrated Zr layer, it ispossible to further improve the reliability of the piezoelectric elementwithout deteriorating the performance thereof.

Aspect 3

In addition, according to another aspect of the invention, there isprovided a liquid discharging head which includes the piezoelectricelement according to the above-described Aspect 1 or 2, in which aliquid in a liquid flow passage is discharged through a nozzle bydriving the piezoelectric element.

Aspect 4

Furthermore, according to still another aspect of the invention, thereis provided a liquid discharging apparatus including the liquiddischarging head according to the above-described Aspect 3.

According to the invention, the piezoelectric element which isconfigured such that the decrease in the amount of displacement of thepiezoelectric element and the leakage current are prevented at the timeof driving is installed, and thereby the improvement of the reliabilityof the liquid discharging head and the liquid discharging apparatus canbe expected.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a perspective view illustrating an internal configuration of aprinter.

FIG. 2 is a sectional view illustrating a configuration a recordinghead.

FIG. 3 is a sectional view of a main portion of the recording head.

FIG. 4 is an expanded sectional view of the vicinity of a piezoelectricelement.

FIGS. 5A to 5D illustrate a flow diagram of steps of manufacturing thepiezoelectric element.

FIGS. 6A and 6B illustrate a flow diagram illustrating steps ofmanufacturing the piezoelectric element.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, an embodiment of the invention will be described withreference to the drawings. Note that the embodiment described below islimited to various preferred specific examples of the invention;however, the scope of the invention is not limited to the embodimentsunless otherwise particularly limited in the following description.

FIG. 1 is a perspective view illustrating an internal configuration of aprinter 1 (one type of liquid discharging apparatuses). The printer 1 isprovided with a recording head 2 (one type of liquid discharging heads),a carriage 4 to which an ink cartridge 3 is detachably attached as anliquid supply source, a carriage moving mechanism 7 for moving thecarriage 4 in a width direction of a recording sheet 6 (one type ofrecording media and landing target), that is, for reciprocating thecarriage 4 in a scanning direction, and a sheet feeding mechanism 8 fortransporting the recording sheet 6 in a sub scanning direction which isorthogonal to the main scanning direction. The carriage 4 is configuredto move in the main scanning direction by the carriage moving mechanism7. The printer 1 records text or images on the recording sheet 6 byreciprocating the carriage 4 while sequentially transporting therecording sheet 6. In addition, it is possible to employ a configurationsuch that the ink cartridge 3 is disposed on a main body of the printer1 instead of the carriage 4, and the ink in the ink cartridge 3 issupplied to the recording head 2 through an ink supply tube.

FIG. 2 is a sectional view illustrating a configuration of a mainportion of the recording head 2, and FIG. 3 is expanded view of area IIIin FIG. 2. In addition, FIG. 4 is a sectional view of a main portion ofa piezoelectric element 35 and a pressure chamber substrate 29 in thewidth direction (a nozzle array direction) of a pressure chamber 31. Therecording head 2 of the embodiment is provided with a pressuregeneration unit 14 and a flow passage unit 21, and the pressuregeneration unit 14 and the flow passage unit 21 are attached to a case26 in a state of being stacked. The flow passage unit 21 includes anozzle plate 22 and a communicating substrate 23. In addition, thepressure generation unit 14 is formed of a pressure chamber substrate 29on which the pressure chamber 31 is formed, an elastic film 30, apiezoelectric element 35, and a protective substrate 24, which arestacked.

The case 26 is a box-shaped member made of a synthetic resin, and thecommunicating substrate 23 to which the nozzle plate 22 and the pressuregeneration unit 14 are bonded is fixed to the lower surface side of thecase 26. At the center of the case 26 in a planar view, a hollow throughportion 44 having a rectangular-shaped opening which is elongated alongthe nozzle array direction is formed in a state of passing through thecase 26 in the vertical direction. The hollow through portion 44communicates with a wiring hollow portion 38 of the pressure generationunit 14 so as to form a hollow portion in which an end portion of awiring member (a flexible cable 49) and a driving IC50 are accommodated.In addition, on the lower surface side of the case 26, an accommodatinghollow portion 47 having a hollow rectangular shape is formed from thelower surface to the middle portion of the case 26 in the verticaldirection. The flow passage unit 21 is positioned and bonded to thelower surface of the case 26, and then the pressure generation unit 14which is stacked on the communicating substrate 23 is accommodated inthe accommodating hollow portion 47. In addition, a lower end of thehollow through portion 44 is opened to a ceiling surface of theaccommodating hollow portion 47.

An ink introduction hollow portion 46 and an ink introduction passage 45are formed in the case 26. The ink introduction passage 45 is a narrowflow passage having a small cross-section as compared with the inkintroduction hollow portion 46, and supplies ink to the ink introductionhollow portion 46 from the ink cartridge 3. The ink supplied into theink introduction hollow portion 46 is introduced to a common liquidchamber 32 (described below) on the communicating substrate 23.

The pressure chamber substrate 29 which is a constituting member of thepressure generation unit 14 is made of a silicon substrate (one type ofcrystalline substrates). On the pressure chamber substrate 29, aplurality of hollow portions (hereinafter, also referred to as thepressure chamber 31) which are a plurality of the pressure chambers 31are formed corresponding to a plurality of nozzles 27 on the nozzleplate 22 by performing anisotropic etching on the silicon substrate. Assuch, in a case where the pressure chamber is formed by performing theanisotropic etching on the silicon substrate, it is possible to securehigher accuracy of dimension and shape. As will be described below, twoarrays of nozzles 27 are formed on the nozzle plate 22 in theembodiment, and thus the two rows of pressure chambers 31 are formed onthe pressure chamber substrate 29 corresponding to each of the twoarrays of nozzles. The pressure chamber 31 is a hollow portion elongatedin the direction orthogonal to the nozzle array direction. The pressurechamber substrate 29 is positioned and bonded to the communicatingsubstrate 23, and then one end portion of the pressure chamber 31communicates with the nozzle 27 in a longitudinal direction via a nozzlecommunicating passage 36 (described below) of the communicatingsubstrate 23. In addition, the other end portion of the pressure chamber31 in the longitudinal direction communicates with the common liquidchamber 32 via an individual communicating port 43 of the communicatingsubstrate 23.

On the surface of the pressure chamber substrate 29 (a surface on theside opposite to a surface bonded to the communicating substrate 23), anelastic film 30 is formed in a state of sealing an opening of an upperportion of the pressure chamber 31. The elastic film 30 is made ofsilicon dioxide having a film thickness of approximately 1 μm. Inaddition, an insulation film 33 is stacked on the elastic film 30. Theinsulation film 33 is formed zirconium oxide, for example. Further, theelastic film 30 and the insulation film 33 function as a vibration plate34 on which a portion corresponding to an opening surface of thepressure chamber 31 can be displaced. The piezoelectric element 35 isformed corresponding to each of the pressure chambers 31 in a state ofbeing stacked on the vibration plate 34.

The piezoelectric element 35 of the embodiment is a piezoelectricelement which is in so-called flexural mode. Such a piezoelectricelement 35 is formed in such a manner that a lower electrode 17(corresponding to a first electrode in the invention), a piezoelectricbody 18, and an upper electrode 19 (corresponding to a second electrodein the invention) are sequentially stacked on the vibration plate 34. Inthe embodiment, the lower electrode 17 is independently formed for eachpressure chamber 31, whereas the upper electrode 19 is continuouslyformed over the plurality of pressure chambers 31 in the nozzle arraydirection. That is, the lower electrode 17 is an individual electrodewhich is formed for each of the pressure chambers 31, and the upperelectrode 19 is a common electrode which is commonly formed over therespective pressure chambers 31. Meanwhile, it is possible to employ areverse configuration of the aforementioned configuration depending on astate of a driving circuit or wiring. In addition, an area where thepiezoelectric body 18 is interposed between a pair of the lowerelectrode 17 and the upper electrode 19 is an active portion in whichpiezoelectric strain occurs due to the voltage application on bothelectrodes.

In addition, various types of metal such as iridium (Ir), platinum (Pt),titanium (Ti), tungsten (W), tantalum (Ta), and molybdenum (Mo), and analloy thereof are used as the upper electrode 19 and the lower electrode17. An example of an alloy electrode includes LaNiO₃. As thepiezoelectric body 18, lead zirconate titanate (PZT) which is acomposite oxide containing titanium (Ti) and zirconium (Zr) is used. Thepiezoelectric body 18 of the embodiment is configured to have a layeredstructure such that a plurality of unit layers 42 are stacked in thefilm thickness direction, and each of the unit layers 42 is formed of afirst layer 40 (corresponding to displacement layer of the invention)which has a relatively low concentration of Zr, and on which thedisplacement is relatively easy to occur at the time of driving thepiezoelectric element 35, and a second layer 41 (corresponding to thelayer having a high concentration of Zr in the invention) which has ahigh concentration of Zr as compared with the first layer 40 (refer toFIG. 4). In addition, when composition ratio Ti/(Zr+Ti) of Zr to Ti ineach of the first layer 40 and the second layer 41 is set as Cr1 andCr2, the composition ratio of each layer is adjusted so as to satisfythe following conditions (1) to (3).

0.41≦Cr1≦0.81   (1)

0.1≦Cr1−Cr2≦0.3   (2)

Cr1>Cr2   (3)

That is, Cr2 can be within a range of 0.11 to 0.71.

Here, in a case where the composition ratio Cr1 of the first layer 40 islower than 0.41, the amount of displacement of the first layer 40becomes remarkably decreased at the time of driving the piezoelectricelement 35, and thus the performance as the piezoelectric element 35 isalso deteriorated. On the other hand, in a case where the compositionratio Cr1 of the first layer 40 is greater than 0.81, the amount ofdisplacement of the first layer 40 is increased; however, a leakagecurrent is likely to occur, and thus the reliability of thepiezoelectric element 35 may become degraded. For this reason, in orderto realize the practical use of the piezoelectric element 35 from theviewpoint of durability and displacement efficiency, it is desired thatthe composition ratio Cr1 is adjusted to be within a range of Condition(1). With this, it is possible to suppress the occurrence of the leakagecurrent while securing the largest amount of displacement possible inthe first layer 40. In addition, in a case where a difference betweenthe composition ratio Cr1 and the composition ratio Cr2 is less than0.1, it is difficult to suppress the leakage current which occurs in thefirst layer 40, in the second layer 41. On the other hand, in a casewhere the difference between the composition ratio Cr1 and thecomposition ratio Cr2 is greater than 0.3, the amount of thedisplacement of the second layer 41 becomes remarkably decreased at thetime of driving the piezoelectric element 35, thereby resulting in thatthe displacement of the entire piezoelectric element 35 is inhibited.For this reason, the composition ratio Cr1 is adjusted to be within arange of Condition (2), and thereby it is possible to prevent the secondlayer 41 from inhibiting the displacement by efficiently suppressing theleakage current in the second layer 41.

Regarding the thickness of the piezoelectric body 18, for example, thefilm thickness of the first layer 40 is approximately 140 [nm], the filmthickness of the second layer 41 is approximately 40 [nm], and the totalthickness of the respective layers, that is, the thickness of the unitlayer 42 is 180 [nm]. Such thickness of the unit layer 42 is adjusted tobe within a range of 150 [nm] to 200 [nm]. A plurality of the unitlayers 42 (for example, five unit layers in total) are staked on eachother and then constitute the piezoelectric body 18. The thickness ofthe piezoelectric body 18 can be within a range of 900 [nm] to 1100[nm].

From the lower electrode 17 of each of the piezoelectric element 35, anindividual electrode wiring portion (not shown) extends into the wiringhollow portion 38, a portion corresponding to an electrode terminal ofthe individual electrode wiring portion is electrically connected to anindividual terminal on one end side of the flexible cable 49. Similarly,from the upper electrode 19, a common electrode wiring portion (notshown) extends into the wiring hollow portion 38, and the a portioncorresponding to an electrode terminal of the common electrode wiringportion is electrically connected to a common terminal on one end sideof the flexible cable 49. The driving IC50 for driving the piezoelectricelement 35 is mounted on the surface of the flexible cable 49.

The protective substrate 24 is disposed on the upper surface of thecommunicating substrate 23 on which the pressure chamber substrate 29and the piezoelectric element 35 are stacked. The protective substrate24 is made of, for example, glass, a ceramic material, a silicon singlecrystal substrate, metal, and a synthetic resin. In the inside of theprotective substrate 24, a recessed portion 39 having such a size so asnot to inhibit the driving of the piezoelectric element 35 is formed inan area facing the piezoelectric element 35. Further, on the protectivesubstrate 24, the wiring hollow portion 38 passing through the substratein the thickness direction is formed between the piezoelectric elementrows which are adjacent to each other. As described above, the electrodeterminal of the piezoelectric element 35 and one end portion of theflexible cable 49 are disposed in the wiring hollow portion 38.

The nozzle plate 22 is bonded to the lower surface of the communicatingsubstrate 23. The nozzle plate 22 is a substrate on which the pluralityof nozzles 27 are formed, and is bonded to the communicating substrate23 in a state where each of the nozzles 27 communicates with each of thenozzle communicating passages 36 of the communicating substrate 23. Theplurality of nozzles 27 are arranged in a row, and nozzle arrays areformed on the nozzle plate 22 at predetermined pitches. In theembodiment, two arrays of nozzles 27 are formed on the nozzle plate 22.In addition, the nozzle plate 22 is made of the silicon substrate. Inaddition, the nozzle 27 is formed into a cylindrical shape by performingdry etching on the plate.

Here, a method of manufacturing the piezoelectric element 35 in theembodiment will be described with reference to FIG. 5A to FIG. 6B.First, as illustrated in FIG. 5A, a step of forming the elastic film 30on a surface of a silicon wafer which is a material of the pressurechamber substrate 29, and a step of forming the insulation film 33,which is made of zirconium oxide on the elastic film 30 are performed.Next, a metal layer is formed on the insulation film 33, and the metallayer is patterned into a predetermined shape so as to form the lowerelectrode 17. Subsequently, the piezoelectric body 18 which is made oflead zirconate titanate (PZT) is formed. As the specific sequence forforming the piezoelectric body 18, first, as illustrated in FIG. 5B, thevibration plate 34 on which the lower electrode 17 is formed is coatedwith sol (solution) which contains Ti, Zr, and Pb such that apiezoelectric body precursor film 51, which is a first unit layer 42 a,is formed. After the piezoelectric body precursor film 51 is formed, adrying step, and a degreasing step are sequentially performed. Afterperforming the degreasing step, a baking step is performed. In thebaking step, the piezoelectric body precursor film 51 is baked and thencrystallized through heating for several tens of minutes by using arapid thermal annealing (RTA) apparatus. After performing theabove-described steps, as illustrated in FIG. 5C, the unit layer 42 aincluding the first layer 40 and the second layer 41 which havedifferent composition ratios is formed. The second layer 41 has a highconcentration of Zr compared with the above-described first layer 40.

In addition, the coating step, the drying step, the degreasing step, andthe baking step which are described above are performed several times,for example, repeatedly performed by four or five times so as to form apiezoelectric body layer 18′ on which the plurality of the unit layers42 (42 a to 42 d) are stacked as illustrated in FIG. 5D. Accordingly,the piezoelectric body layer 18′ is formed in such a manner that thefirst layer 40 on which the displacement is relatively easy to occur,and the plurality of second layers 41 which have a high concentration ofZr as compared with the first layer 40 are stacked on each other in thefilm thickness direction. Note that a configuration such that the uppermost layer of the piezoelectric body 18 is the second layer 41 isexemplified; however, the invention is not limited to the aforementionedconfiguration. For example, it is possible to employ a configurationsuch that the upper most layer of the piezoelectric body 18 is the firstlayer 40. In a case where the piezoelectric body layer 18′ is formed, asillustrated in FIG. 6A, the piezoelectric body 18 is individually formedcorresponding to each pressure chamber 31 by patterning thepiezoelectric body layer 18′ through a photolithographic method. Afterthe piezoelectric body 18 is patterned, as illustrated in FIG. 6B, themetal layer is formed over the entire surface of vibration plate 34, onwhich the lower electrode 17 and the piezoelectric body 18 are formed,through a sputtering method, and then the metal layer is patterned so asto form the upper electrode 19 on the piezoelectric body 18 as thecommon electrode. Thereafter, a protective film (not shown) which ismade of aluminum oxide (Al₂O₃) or the like is formed. In this way, thepiezoelectric element 35 of the embodiment is formed.

As described above, the piezoelectric element 35 according to theinvention is formed of the first layer 40 which has a relatively lowconcentration of Zr, and the second layer 41 which has a highconcentration of Zr as compared with the first layer 40 are stacked oneach other in the film thickness direction, that is, the plurality ofsecond layers 41 which have a relatively high concentration of Zr areformed in the piezoelectric body 18 in the thickness direction, and thusit is possible to prevent not only the amount of displacement of thepiezoelectric element 35 from being decreased, but also leakage currentthereof from occurring, at the time of driving. In addition, theplurality of unit layers 42 are formed in such a way of being stacked,and thus, even in a case where one of the second layers 41 is damaged,it is possible to suppress the leakage current with other second layers41. Therefore, the reliability of the piezoelectric element 35 isimproved.

In addition, in the recording head 2 which is provided with thepiezoelectric element 35 according to the invention and the printer 1 inwhich the recording head 2 is installed, the piezoelectric element 35configured such that the decrease in the amount of displacement and theleakage current are prevented is installed, and thereby the improvementof the reliability can be expected.

Note that the composition ratio Cr1 of the first layer 40 is within arange of 0.41 to 0.81 in the embodiment; however, it is preferablywithin a range of 0.51 to 0.71. With this, it is possible to furtherreduce the occurrence of the leakage current in the first layer 40, andto reliably prevent the amount of the displacement from becomingdecreased at the time of driving. For this reason, with the effect ofpreventing the leakage current in the second layer 41, it is possible tofurther improve the reliability of the piezoelectric element 35 withoutdeteriorating the performance thereof.

In addition, the configuration of the recording head 2 is not limited tothe foregoing description, for example, other configurations can beemployed as the configuration of the recording head 2. In addition, theused of the piezoelectric element 35 is not limited to the liquiddischarging head used for the liquid discharging apparatus. For example,it can be used for various sensors using a piezoelectric element. Inshort, it is possible to apply any piezoelectric element to the presentinvention as long as the piezoelectric element is made of lead zirconatetitanate (PZT).

In addition, in the above-described embodiment, an ink jet recordinghead which is installed in an ink jet printer is exemplified as theliquid discharging head; however, the invention is applicable to otherheads or apparatuses for discharging liquids other than ink. Forexample, a color material discharging head used for manufacturing acolor filter such as a liquid crystal display, an electrode materialdischarging head used for forming electrodes such as an organic electroluminescence (EL) display and a field emission display (FED), abio-organic material discharging head used for manufacturing a bio-chip(a biochemical element), and a liquid discharging apparatus which isprovided with the aforementioned heads.

What is claimed is:
 1. A piezoelectric element, wherein a firstelectrode, a piezoelectric body, and a second electrode are sequentiallystacked, wherein the piezoelectric body is a composite oxide containingtitanium (Ti) and zirconium (Zr), and is configured such that when anelectric field is provided between the first electrode and the secondelectrode, displacement on displacement layers is relatively easy tooccur, and a plurality of high-concentrated Zr layers which have a highconcentration of Zr as compared with the displacement layers are stackedon each other in a film thickness direction, and wherein whencomposition ratio Ti/(Zr+Ti) of zirconium to titanium in each of thedisplacement layer and high-concentrated Zr layer is set as Cr1 and Cr2,the composition ratio Cr1 is within a range of 0.41 to 0.81, and adifference between the composition ratio Cr1 and the composition ratioCr2 is within a range of 0.1 to 0.3, Cr1>Cr2 is established.
 2. Thepiezoelectric element according to claim 1, wherein the compositionratio Cr1 is within a range of 0.51 to 0.71.
 3. A liquid discharginghead comprising the piezoelectric element according to claim 1, whereina liquid in a liquid flow passage is discharged through a nozzle bydriving the piezoelectric element.
 4. A liquid discharging apparatuscomprising the liquid discharging head according to claim 3.